Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
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2. Rrustemi B, Viey AG, Jaud M-A, Triozon F, Vandendaele W, Leroux C, Cluzel J, Martin S, Le Royer C, Gwoziecki R, Modica R, Iucolano F, Gaillard F, Poiroux T, Ghibaudo G. Reliable Method for Low Field Temperature Dependent Mobility Extraction at Al2O3/GaN Interface. In: ESSDERC 2021 - IEEE 51st European solid-state device research conference. p. 295–8. http://dx.doi.org/10.1109/ESSDERC53440.2021.9631766.
3. Bulutay C, Ridley BK, Zakhleniuk NA. Full-Band Polar Optical Phonon Scattering Analysis and Negative Differential Conductivity in Wurtzite GaN. Phys Rev B 62(23):15754–63. http://dx.doi.org/10.1103/PhysRevB.62.15754.
4. Jin S, Fischetti MV, Tang T-w. Modeling of Electron Mobility in Gated Silicon Nanowires at Room Temperature: Surface Roughness Scattering, Dielectric Screening, and Band Nonparabolicity. J Appl Phys 0021-8979102(8):083715. http://dx.doi.org/10.1063/1.2802586.
5. Koller C, Lymperakis L, Pogany D, Pobegen G, Ostermaier C. Mechanism Leading to Semi-Insulating Property of Carbon-Doped GaN: Analysis of Donor Acceptor Ratio and Method for Its Determination. J Appl Phys 0021-8979130(18):185702. http://dx.doi.org/10.1063/5.0060912.
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