Split-Gate-Enhanced Power UMOSFET With Soft Reverse Recovery-Reference-Cited by-同舟云学术

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Split-Gate-Enhanced Power UMOSFET With Soft Reverse Recovery

Published:2013-06 Issue:6 Volume:60 Page:2084-2089
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Ying,Jiao Wen-Li,Hu Hai-Fan,Liu Yun-Tao,Gao Jing

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6516920/06515180.pdf?arnumber=6515180

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A physics-based compact model of shield gate trench MOSFET;Microelectronics Journal;2023-01

2. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics;Journal of Semiconductors;2022-12-01

3. An Ultralow On-Specific Resistance Trench MOSFET With Multiple Stepped Accumulation Layer for Conduction;IEEE Transactions on Electron Devices;2021-08

4. Improved 4H-SiC UMOSFET with super-junction shield region*;Chinese Physics B;2021-05-01

5. Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage;Solid State Electronics Letters;2020-12

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