Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage-Reference-Cited by-同舟云学术

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Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage

Published:2020-12 Issue: Volume:2 Page:23-27
ISSN:2589-2088
Container-title:Solid State Electronics Letters
language:en
Short-container-title:Solid State Electronics Letters

Author:

Lee Yu-Chin,Lin Jyh-Ling

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Reference12 articles.

1. 100 V class multiple stepped oxide field plate trench MOSFET (MSO-FP-MOSFET) aimed to ultimate structure realization;Kobayasi,2015

2. The trench power MOSFET: part i—history, technology, and prospects;Williams;IEEE Trans. Electron Dev.,2017

3. Static and dynamic analysis of split-gate RESURF stepped oxide (RSO) MOSFETs for 35 V applications;Tong,2009

4. Method to improve trade-off performance for split-gate power U-shape metal-oxide semiconductor field-effect transistor with compound trench dielectrics;Wang;IET Power Electron.,2014

5. Split-gate-enhanced power UMOSFET with soft reverse recovery;Wang;IEEE Trans. Electron Dev.,2013

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and thermal steadiness of trenched stepped gate SON MOSFET for future CMOS devices;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

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