Lau’s Unified Schottky-Poole-Frenkel Theory with Asymmetric Distortion by Electron Charge Trapping Proposed to Explain the Current-Voltage Characteristics of High-K Metal-Insulator-Metal Capacitors
Author:
Affiliation:
1. Nanyang Technological University (Retired),School of EEE,Singapore,639798
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10219185/10219154/10219305.pdf?arnumber=10219305
Reference5 articles.
1. The application of Lau’s Schottky-Poole-Frenkel theory to distinguish leakage current mechanisms in high-k MIM capacitors by pattern recognition;lau;CSTIC 2022 (China Semiconductor Technology International Conference Shanghai 2022 IEEE),2022
2. The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode
3. Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors
4. Impact of fixed charge on metal-insulator-semiconductor barrier height reduction
5. An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Thin Film Metal-Insulator-Metal Capacitors with Examples for Various High-k Dielectric Materials
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