Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors-Reference-Cited by-同舟云学术

Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors

Published:2005-05 Issue:5-6 Volume:45 Page:925-928
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Deloffre E.,Montès L.,Ghibaudo G.,Bruyère S.,Blonkowski S.,Bécu S.,Gros-Jean M.,Crémer S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

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2. Gros-Jean M, Crémer S, Besset C, Salicio O. In: 11th wokshop on Dielectrics in Microelectronics, 2002

3. Tu YL, Lin HL, Chao LL, Wu D, Tsai CS, Wang C, Huang CF. VLSI conf, 2003

4. Besset C, Bruyère S, Blonkowski S, Crèmer S, Vincent E. In: 11th wokshop on Dielectrics in Microelectronics, 2002

5. Hammound A, Patterson RL, MacDonald T. Electrical insulation and dielectric phenomena, Annual Report, Conf, 1998

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