A Geometry Scalable Model for Nonlinear Thermal Impedance of Trench Isolated HBTs

Author:

Sahoo Amit Kumar,Fregonese Sebastien,Desposito Rosario,Aufinger Klaus,Maneux Cristell,Zimmer Thomas

Funder

European Commission through the Seventh Framework Program for Research and Technological Development

IMS Laboratory, University of Bordeaux, Bordeaux, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Thermal impedance of SiGe HBTs: Characterization and modeling;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

2. Generalized Burnout Model for Circuit Simulation;IEEE Transactions on Electromagnetic Compatibility;2021

3. Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation;Electronics;2020-08-23

4. An approach for determining thermal resistance model parameters of SiGe HBT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-05-20

5. Thermal analysis of microwave GaN-HEMTs in conventional and flip-chip assemblies;International Journal of RF and Microwave Computer-Aided Engineering;2018-08-28

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