Thermal analysis of microwave GaN-HEMTs in conventional and flip-chip assemblies

Author:

Feghhi Rouhollah1,Joodaki Mojtaba1ORCID

Affiliation:

1. Electrical Engineering Department; Ferdowsi University of Mashhad; Mashhad Iran

Funder

Ferdowsi University of Mashhad

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference60 articles.

1. A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications;Joshin;IEEE International Electron Devices Meeting,2003

2. A review of GaN on SiC high electron-mobility power transistors and MMICs;Pengelly;IEEE Trans Micro Theor Techn,2012

3. Comparison of AlGaN/GaN and AlGaAs/GaAs based HEMT device under doping consideration;Firoz;Int J Adv Eng Technol,2011

4. C. Mion 2006

5. Thermal Design of Electronic Equipment

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