Thermal impedance of SiGe HBTs: Characterization and modeling-Reference-Cited by-同舟云学术

Thermal impedance of SiGe HBTs: Characterization and modeling

Published:2022-10-16 Issue: Volume: Page:
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Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Jin Xiaodi¹,Liang Guangsheng¹,Zimmermann Yves¹,Fischer Gerhard²,Weimer Christoph¹,Krattenmacher Mario¹,Zhang Yaxin¹,Schröter Michael¹

Affiliation:

1. TU Dresden,Chair for Electron Devices and Integrated Circuits,Dresden,Germany,01069

2. IHP - Leibniz-Institut Für Innovative Mikroelektronik,Frankfurt (Oder),Germany,15236

Funder

National Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051764.pdf?arnumber=10051764

Reference20 articles.

1. Small-signal operation of semiconductor devices including self-heating, with application to thermal characterization and instability analysis

2. Characterization and modeling of thermal dynamic behavior of AlGaAs/GaAs HBTs;lu;IEEE MTT-S Int’l Microw Symp,1998

3. A simple technique for measuring the thermal impedance and the thermal resistance of HBTs;lonac;Gallium Arsenide and Other Semiconduct Applicat Symp Dig,2005

4. Investigation on temperature dependence of thermal constant and thermal impedance of SiGe HBT;liang;Studienarbeit Technische Universität Dresden,2021

5. Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

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