Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation-Reference-Cited by-同舟云学术

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Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

Published:2011-09 Issue: Volume: Page:
ISSN:
Container-title:2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
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Author:

Sahoo Amit Kumar,Fregonese Sebastien,Weis Mario,Malbert Nathalie,Zimmer Thomas

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6034694/6044153/06044190.pdf?arnumber=6044190

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal impedance of SiGe HBTs: Characterization and modeling;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

2. Electrothermal Characterization, TCAD Simulations, and Physical Modeling of Advanced SiGe HBTs;Nanoelectronics;2019

3. A comprehensive layout of two-dimensional thermal network model for TIM with pulsed heat source;International Journal of Advances in Engineering Sciences and Applied Mathematics;2018-11-20

4. Geometry optimization of thermal interface material with the help of heat propagation speed subjected to a pulsed heat source;International Journal of Thermal Sciences;2017-01

5. 80ns/45GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices;Solid-State Electronics;2013-06

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