Author:
Weiß Mario,Fregonese Sébastien,Santorelli Marco,Sahoo Amit Kumar,Maneux Cristell,Zimmer Thomas
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. DOTFIVE, Towards 0.5 THz Silicon/Germanium Heterojunction Bipolar Technology. EUFP7 funded IP, number 216110, .
2. Heinemann B, Barth R, Bolze D, Drews J, Fischer G, Fox A, et al. SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0ps CML gate delay. In: Electron devices meeting (IEDM), 2010 IEEE international; 2010. p. 30.5.1–30.5.4.
3. Sahoo A.K, Fregonese S, Weiss M, Malbert N, Zimmer T. Electro-thermal characterization of Si–Ge HBTs with pulse measurement and transient simulation. In: Solid-state device research conference (ESSDERC), 2011 Proceedings of the European; 2011. p. 239–42.
4. Schaefer B and Dunn M. Pulsed measurements and modeling for electro-thermal effects, In: Bipolar/BiCMOS Circuits and Technology Meeting, 1996 Proceedings of the 1996; 1996. p. 110–17.
5. 40GHz/150ns versatile pulsed measurement system for microwave transistor isothermal characterization;Teyssier;IEEE Trans Microwave Theory Techn,1998
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