TCAD Modelling of 30nm Strained-Si/SiGe/Si Channel MOSFET
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8766339/8783209/08783606.pdf?arnumber=8783606
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5. Development of 14nm Tri-layered (s-Si/s-SiGe/s-Si) Channel DG- NanoFET;2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS);2020-07
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