TCAD Modelling of 30nm Strained-Si/SiGe/Si Channel MOSFET
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8766339/8783209/08783606.pdf?arnumber=8783606
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization on the thermal field inside IGBT cells during switching based on TCAD modeling and Thermoreflectance imaging;Microelectronics Journal;2023-12
2. Construction of LC Filter Integrated Circuit and Analysis of Control System Function;2023 IEEE 3rd International Conference on Power, Electronics and Computer Applications (ICPECA);2023-01-29
3. Study of Turns Impact on ESD-immunity of High-voltage nLDMOSs with a Constant Floating-poly;2022 IEEE 4th Eurasia Conference on IOT, Communication and Engineering (ECICE);2022-10-28
4. Development of 14nm Tri-layered (s-Si/s-SiGe/s-Si) Channel DG- NanoFET;2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS);2020-07
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