Simulation Research of 4H-SiC Double-Trench MOSFET with High-k Gate Dielectric Materials
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9670881/9671056/09671233.pdf?arnumber=9671233
Reference9 articles.
1. Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs
2. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
3. Characterization and Comparison of Planar and Trench Silicon Carbide (SiC) Power MOSFETs
4. Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2/ Al2O3Gate Stack
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric;IET Power Electronics;2024-04-23
2. Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method;Applied Physics A;2024-02-20
3. TCAD Analysis of Substrate Thickness of a 10nm Vertical Double Gate SOI n-Type MOSFET;2023 5th International Conference on Smart Systems and Inventive Technology (ICSSIT);2023-01-23
4. TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications;2022 13th International Conference on Computing Communication and Networking Technologies (ICCCNT);2022-10-03
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