Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method
Author:
Funder
Korea Evaluation Institute of Industrial Technology
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s00339-024-07285-1.pdf
Reference39 articles.
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2. S.W. Jung, S.M. Koo, BaTiO3–SiC nanopowder composite-based metal-insulator-semiconductor structure prepared by aerosol deposition. J. Nanosci. Nanotechnol.Nanosci. Nanotechnol. 16(11), 11402–11405 (2016). https://doi.org/10.1166/jnn.2016.13517
3. Z. Wang, L. Liu, Simulation research of 4H-SiC double-trench MOSFET with high-k gate dielectric materials. In: 2021 International workshop on advanced patterning solutions (IWAPS). IEEE, pp. 1–4 (2021). https://doi.org/10.1109/IWAPS54037.2021.9671233
4. F. Zhuo, U.R. Eckstein, N.H. Khansur, C. Dietz, D. Urushihara, T. Asaka et al., Temperature-induced changes of the electrical and mechanical properties of aerosol-deposited BaTiO3 thick films for energy storage applications. J. Am. Ceram. Soc. 105(6), 4108–4121 (2022). https://doi.org/10.1111/jace.18377
5. C. Wang, H.J. Kim, F.Y. Meng, H.K. Kim, Y. Li, Z. Yao, N.Y. Kim, Room temperature fabrication of MIMCAPs via aerosol deposition. IEEE Electron Device Lett. 37(2), 220–223 (2015). https://doi.org/10.1109/LED.2015.2506406
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