Investigations of 900V 4H-SiC Planar Power MOSFET for More Robust Reliability Performance-Reference-Cited by-同舟云学术

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Investigations of 900V 4H-SiC Planar Power MOSFET for More Robust Reliability Performance

Published:2023-07-24 Issue: Volume: Page:
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Container-title:2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Choi Jake¹,Lee Kwangwon²,Kim Daiwon³,Sheng Lieyi⁴

Affiliation:

1. Onsemi,Quality & Reliability,South Portland,ME,U.S.A,04106

2. Onsemi,Electronic Design,Bucheon,Republic of Korea

3. Onsemi,Failure Analysis,Bucheon,Republic of Korea

4. Onsemi,Quality & Reliability,Pocatello,ID,U.S.A

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10248978/10248979/10249098.pdf?arnumber=10249098

Reference18 articles.

1. Investigation of Failure Mechanisms of 1200 V Rated Trench SiC MOSFETs Under Repetitive Avalanche Stress

2. Experimental and Theoretical Demonstration of Temperature Limitation for 4H-SiC MOSFET During Unclamped Inductive Switching

3. Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films

4. Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs

5. Single-Pulse Avalanche Mode Robustness of Commercial 1200 V/80 mΩ SiC MOSFETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Avalanche Capability of SiC MOSFET Under High Current;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

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