Investigation of Failure Mechanisms of 1200 V Rated Trench SiC MOSFETs Under Repetitive Avalanche Stress
Author:
Affiliation:
1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China
2. School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China
Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9780877/09745832.pdf?arnumber=9745832
Reference41 articles.
1. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
2. Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation
3. Ultrathin gate oxide reliability: physical models, statistics, and characterization
4. Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions
5. A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses
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