Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation-Reference-Cited by-同舟云学术

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Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

Published:2018-06 Issue:2 Volume:18 Page:144-153
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Puschkarsky Katja^ORCID,Reisinger Hans,Aichinger Thomas,Gustin Wolfgang,Grasser Tibor

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/8373008/08307475.pdf?arnumber=8307475

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Systematic study on temperature and time-varying characteristics of SiC MOSFET static parameters at 200 °C;Journal of Power Electronics;2023-11-04

2. Investigation of Reverse Recovery Phenomenon for SiC MOSFETs in High-Temperature Applications;IEEE Transactions on Power Electronics;2023-11

3. AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters;IEEE Transactions on Vehicular Technology;2023-10

4. Power Losses Reduction of Parallel Connected Power Electronics Devices;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

5. Bias-Induced Instability of 4H-SiC CMOS;Materials Science Forum;2023-06-06

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