A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses-Reference-Cited by-同舟云学术

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A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses

Published:2018-06 Issue:6 Volume:33 Page:5251-5261
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Zhou Xintian^ORCID,Su Hongyuan,Yue Ruifeng,Dai Gang^ORCID,Li Juntao,Wang Yan^ORCID,Yu Zhiping

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/8299601/07987746.pdf?arnumber=7987746

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