Experimental and Theoretical Demonstration of Temperature Limitation for 4H-SiC MOSFET During Unclamped Inductive Switching-Reference-Cited by-同舟云学术

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Experimental and Theoretical Demonstration of Temperature Limitation for 4H-SiC MOSFET During Unclamped Inductive Switching

Published:2020-03 Issue:1 Volume:8 Page:206-214
ISSN:2168-6777
Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

An Junjie^ORCID,Hu Shengdong^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

http://xplorestaging.ieee.org/ielx7/6245517/8977415/08851172.pdf?arnumber=8851172

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics and avalanche investigation of SiC VDMOSFETs with enhanced P-Based implantation;Microelectronics Reliability;2024-09

2. SiC Super-Junction MOSFET robustness assessment and method to improve avalanche capability;Microelectronics Reliability;2024-06

3. Impact of SiC power MOSFET interface trap charges on UIS reliability under single pulse;Microelectronics Reliability;2024-04

4. Methodology of Failure Mode Analysis in Short-Circuit State of SiC MOSFETs by Electro-Thermal-Mechanical TCAD Simulations;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

5. A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET;Micromachines;2023-12-23

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