Investigation of Low-Frequency Noise Behavior After Hot-Carrier Stress in an n-Channel Junctionless Nanowire MOSFET-Reference-Cited by-同舟云学术

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Investigation of Low-Frequency Noise Behavior After Hot-Carrier Stress in an n-Channel Junctionless Nanowire MOSFET

Published:2012-11 Issue:11 Volume:33 Page:1538-1540
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Park Chan-Hoon,Ko Myung-Dong,Kim Ki-Hyun,Lee Sang-Hyun,Yoon Jun-Sik,Lee Jeong-Soo,Jeong Yoon-Ha

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6335490/06329397.pdf?arnumber=6329397

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Leakage Current and Hot-Carrier Injection in the Junctionless Nanowire FETs Enhanced by Tensile Mechanical Stress;IEEE Transactions on Electron Devices;2024-07

2. Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors;IEEE Electron Device Letters;2023-06

3. Aging Mechanism of p-Type Dopingless JLFET: NBTI and Channel-Hot-Carrier Stress;Transactions on Electrical and Electronic Materials;2022-12-31

4. On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact;Solid-State Electronics;2022-05

5. Impact of Gaussian Doping on SRAM Cell Stability in 14nm Junctionless FinFET Technology;Silicon;2021-10-11

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