Impact of Gaussian Doping on SRAM Cell Stability in 14nm Junctionless FinFET Technology-Reference-Cited by-同舟云学术

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Impact of Gaussian Doping on SRAM Cell Stability in 14nm Junctionless FinFET Technology

Published:2021-10-11 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Kaundal Shalu,Rana Ashwani Kumar

Funder

Visvesvaraya PhD scheme for Electronics and IT

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-021-01411-x.pdf

Reference33 articles.

1. Colinge JP, Lee CW, Afzalian A et al (2010) Nanowire transistors without junctions. Nat Nanotechnol 5:225–229

2. Colinge JP, Kranti A, Yan R et al (2011) Junctionless nanowire transistor (JNT): Properties and design guidelines. Solid-State Electron 65:33–37

3. Gnani E, Gnudi A, Reggiani S, Baccarani G (2011) Theory of the junctionless nanowire FET. IEEE Trans Electron Devices 58:2903–2910

4. Lee CW, Ferain I, Afzalian A et al (2010) Performance estimation of junctionless multigate transistors. Solid-State Electron 54:97–103

5. Han MH, Chang CY, Jhan YR et al (2013) Characteristic of p-type junctionless gate-all-around nanowire transistor and sensitivity analysis. IEEE Electron Device Lett 34:157–159

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. FinFET to GAA MBCFET: A Review and Insights;IEEE Access;2024

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