On the Excess Noise Factors and Noise Parameter Equations for RF CMOS-Reference-Cited by-同舟云学术

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On the Excess Noise Factors and Noise Parameter Equations for RF CMOS

Published:2007-01 Issue: Volume: Page:
ISSN:
Container-title:2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
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Author:

Cui Yan,Niu Guofu,Li Ying,Taylor Stewart S.,Liang Qingqing,Cressler John D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4117300/4117301/04117320.pdf?arnumber=4117320

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Design Space Exploration of TRNG Latches for Improved Entropy and Efficiency;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18

3. Bias-Dependent Intrinsic RF Thermal Noise Modeling and Characterization of Single-Layer Graphene FETs;IEEE Transactions on Microwave Theory and Techniques;2021-11

4. Experimental Extraction of Thermal Noise γ Factors in a 14-nm RF FinFET technology;2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2021-01-17

5. FDSOI Industry Perspective and Analog/Radio-Frequency Circuit Design;Industry Standard FDSOI Compact Model BSIM-IMG for IC Design;2019

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