FDSOI Industry Perspective and Analog/Radio-Frequency Circuit Design
Author:
Watts Josef,McKay Thomas
Reference24 articles.
1. B.W. Smith, Y. Fan, M. Slocum, L. Zavyalova, 25 nm immersion lithography at a 193 nm wavelength, in: SPIE, 2005.
2. Principles of Lithography;Levinson,2010
3. Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions;Markov;IEEE Electron Device Lett.,2012
4. T. Hiramoto, et al., Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs, in: Custom Integrated Circuits Conference, San Jose, CA, 2011.
5. FET statistical modeling using parameter orthogonalization;Carroll;IEEE Trans. Microwave Theory,1996