Ka-Band Low-Loss and High-Isolation 0.13 μm CMOS SPST/SPDT Switches Using High Substrate Resistance-Reference-Cited by-同舟云学术

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Ka-Band Low-Loss and High-Isolation 0.13 μm CMOS SPST/SPDT Switches Using High Substrate Resistance

Published:2007-06 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
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Author:

Min Byung-Wook,Rebeiz Gabriel M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4266345/4266346/04266496.pdf?arnumber=4266496

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 4.12 GHz, 3.3 mW VCO with 87.9% tuning range using a transformer-based variable inductance;AEU - International Journal of Electronics and Communications;2023-05

2. A Ka-Band SPDT Switch Utilizing Center-Tapped Inductor Resonance Network;2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2022-08-12

3. Compact Interference Based Microstrip Single-Pole Double-Throw Utilizing Liquid Crystal Phase Shifter;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19

4. Ka-Band Low Loss and High Power SPDT Switch with Stacked-FET Topology;2022 7th International Conference on Computer and Communication Systems (ICCCS);2022-04-22

5. A Broadband, mm-Wave SPST Switch With Minimum 50-dB Isolation in 45-nm SOI-CMOS;IEEE Transactions on Microwave Theory and Techniques;2021-06

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