A Ka-Band SPDT Switch Utilizing Center-Tapped Inductor Resonance Network
Author:
Affiliation:
1. Southeast University,Institute of RF-& OE-ICs,Nanjing,China,210096
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10022051/10022057/10022789.pdf?arnumber=10022789
Reference8 articles.
1. A Compact Bi-directional K and Ka Band SPDT in $0.13\mu\mathrm{m}$ SiGe BiCMOS Process
2. A 68-dB Isolation 1.0-dB Loss Compact CMOS SPDT RF Switch Utilizing Switched Resonance Network
3. 28 GHz 1.8 dB Insertion Loss SPDT Switch with 24 dB Isolation in 65 nm CMOS
4. Analytical Equivalent Circuit Extraction Procedure for Broadband Scalable Modeling of Three-Port Center-Tapped Symmetric On-Chip Inductors
5. A Small-Size K-Band SPDT Switch Using Alternate CMOS Structure With Resonating Inductor Matching
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1. Design and Analysis of Complementary Metal–Oxide–Semiconductor Single-Pole Double-Throw Switches for 28 GHz 5G New Radio;Electronics;2023-10-07
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