28 GHz 1.8 dB Insertion Loss SPDT Switch with 24 dB Isolation in 65 nm CMOS
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8528202/8541358/08541696.pdf?arnumber=8541696
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Implementation of Single Chip 28 GHz SPDT Switch-less Front-end Circuits in a 65nm CMOS process;2023 14th International Conference on Information and Communication Technology Convergence (ICTC);2023-10-11
2. High isolation and high power of 0.13 µm CMOS SPDT switch using deep‐N‐well transistors and floating‐body technique in K‐band;Microwave and Optical Technology Letters;2023-03-16
3. A 24–40 GHz Differential SPDT Switch With an NMOS and PMOS Alternating Structure and Leakage-Canceling Capacitors;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-01
4. A High-Isolation SPDT T/R switch in 0.18-μm CMOS for Wi-Fi 7 Applications;2022 IEEE 4th Eurasia Conference on IOT, Communication and Engineering (ECICE);2022-10-28
5. A K-band CMOS Power Amplifier with 3-Bit Phase Shifting Characteristics;2022 19th International SoC Design Conference (ISOCC);2022-10-19
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