A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications
Author:
Affiliation:
1. Indian Institute of Technology Kanpur,Department of Electrical Engineering,Kanpur,India,208016
2. Space Applications Centre, Indian Space Research Organisation,Micro Electronics Group,Ahmedabad,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10102930.pdf?arnumber=10102930
Reference11 articles.
1. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping
2. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model
3. A width-scalable SPICE compact model for GaN HEMTs including self-heating effect
4. A millimeter‐wave scalable small‐signal modeling approach based on FW‐EM for AlGaN/GaN HEMT up to 110 GHz
5. Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Scalable GaN-HEMT Model for X-band RF Applications;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
2. Verilog-A Based ANN Large Signal Modeling of Gan Hemts;2024 6th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE);2024-02-29
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