Scalable GaN-HEMT Model for X-band RF Applications
Author:
Affiliation:
1. Indian Institute of Technology,Department of Electrical Engineering,Kanpur,India
2. Solid State Research Laboratory (SSPL), Defence Research and Development Organization (DRDO),India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511270/10511310/10512345.pdf?arnumber=10512345
Reference10 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. GaN-on-Si Power Technology: Devices and Applications
3. On the Large Signal Evaluation and Modeling of GaN FET
4. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model
5. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping
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