High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs-Reference-Cited by-同舟云学术

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High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs

Published:2023-03-07 Issue: Volume: Page:
ISSN:
Container-title:2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Chauhan Yogesh S.¹,Kar Anirban¹,Parihar Shivendra S.¹,Huang Jun Z.²,Zhang Huilong²,Wang Weike²,Imura Kimihiko²

Affiliation:

1. Indian Institute of Technology Kanpur,Kanpur,India,208016

2. MaxLinear Inc.,Carlsbad,California,USA,92008

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10102927/10102928/10103010.pdf?arnumber=10103010

Reference10 articles.

1. High-voltage-tolerant i/o buffers with low-voltage cmos process;singh;IEEE Journal of Solid-State Circuits,1999

2. Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs

3. Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension Designs

4. FinFET LDMOS technology challenges and opportunities for digital TV and 6GHz WiFi PA applications;singh;2021 Symposium on VLSI Technology,2021

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved RF Performance with Buried Power Rail and Contact over Active Gate in Nanosheet FETs;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

2. Small-Signal and Large-Signal RF Characterization and Modeling of Low and High Voltage FinFETs for 14/16 nm Technology Node SoCs;IEEE Journal of the Electron Devices Society;2024

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