Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension Designs-Reference-Cited by-同舟云学术

Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension Designs

Published:2018-10 Issue:10 Volume:65 Page:4225-4231
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Bo-Yuan,Chen Kun-Ming^ORCID,Chiu Chia-Sung,Huang Guo-Wei^ORCID,Chen Hsiu-Chih,Chen Chun-Chi^ORCID,Hsueh Fu-Kuo,Chang Edward Yi^ORCID

Funder

Center for Semiconductor Technology Research through The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education in Taiwan

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8469117/08445704.pdf?arnumber=8445704

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