Improved RF Performance with Buried Power Rail and Contact over Active Gate in Nanosheet FETs
Author:
Affiliation:
1. National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan
Funder
National Science and Technology Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10557746/10557828/10558338.pdf?arnumber=10558338
Reference33 articles.
1. End-to-end 6G Terahertz Wireless Platform with Adaptive Transmit and Receive Beamforming
2. The Role of Millimeter-Wave Technologies in 5G/6G Wireless Communications
3. RF Performance of Stacked Si Nanosheet nFETs
4. High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs
5. A 22nm FDSOI Technology with integrated 3.3V/5V/6.5V RFLDMOS Devices for IOT SOC applications
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