GA Assisted ANN based GaN HEMT Model Development and Demonstration of its CAD Incorporation for Class-F Power Amplifier
Author:
Affiliation:
1. School of Engineering and Digital Sciences, Nazarbayev University,Nur-Sultan,Kazakhstan,010000
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10102927/10102928/10102998.pdf?arnumber=10102998
Reference8 articles.
1. Machine learning-based broadband GaN HEMT behavioral model applied to class-J power amplifier design
2. A Generic and Efficient Globalized Kernel Mapping-Based Small-Signal Behavioral Modeling for GaN HEMT
3. On Neural Networks Based Electrothermal Modeling of GaN Devices
4. A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation
5. Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of ANFIS and ANN for Small-Signal Modelling of GaN HEMT up to 40 GHz;2023 International Conference on Microelectronics (ICM);2023-12-17
2. Artificial Intelligence-Based Modeling of Microwave GaN HEMT Power Dissipation;2023 22nd Mediterranean Microwave Symposium (MMS);2023-10-30
3. Small-Signal Modeling of GaN-on-Diamond HEMT Using ANFIS Method;2023 International Symposium on Networks, Computers and Communications (ISNCC);2023-10-23
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