Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors

Published:2021-01-11 Issue:3 Volume:31 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Jarndal Anwar¹^ORCID,Husain Saddam²,Hashmi Mohammad²

Affiliation:

1. Electrical Engineering Department University of Sharjah Sharjah United Arab Emirates

2. Electrical and Computer Engineering Department Nazarbayev University Astana Kazakhstan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.22542

Reference39 articles.

1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. GhannouchiFM HashmiMS.Load‐pull techniques and their applications in power amplifiers design. Paper presented at: IEEE Bipolar/BiCMOS Circuits and Technology Meeting Atlanta USA pp.1–5 October 2011.

4. Self-Heating in GaN Transistors Designed for High-Power Operation

5. Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

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