Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9125439/9128217/09129306.pdf?arnumber=9129306
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-10
2. Azimuthal Charge Redistribution of Hemi-Cylindrical Vertical NAND Flash Memory;IEEE Electron Device Letters;2023-06
3. Distributed Cycling in Charge Trap-Based 3D NAND Arrays: Model and Qualification Tests Implications;2023 IEEE International Memory Workshop (IMW);2023-05
4. A Physics-based Model for Long Term Data Retention Characteristics in 3D NAND Flash Memory;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
5. A physical model for long term data retention characteristics in 3D NAND flash memory;Solid-State Electronics;2023-01
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