Azimuthal Charge Redistribution of Hemi-Cylindrical Vertical NAND Flash Memory-Reference-Cited by-同舟云学术

Azimuthal Charge Redistribution of Hemi-Cylindrical Vertical NAND Flash Memory

Published:2023-06 Issue:6 Volume:44 Page:931-934
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Uhm Ji Ho¹^ORCID,Chang Jin Ho²^ORCID,Kim Joonggyu³,Kwon Eunmee³,Choi Woo Young²^ORCID

Affiliation:

1. Department of Electronic Engineering, Sogang University, Seoul, Mapo-gu, Republic of Korea

2. Department of Electrical and Computer Engineering and the Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, Gwanak-gu, Republic of Korea

3. SK Hynix, Gyeonggi-do, Icheon-si, Republic of Korea

Funder

National Research Foundation of Korea (NRF) of South Korea funded by the Ministry of Science and ICT (MSIT)

Processing-in-Memory (PIM) Semiconductor Technology Development Program

Mid-Career Researcher Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10132335/10098570.pdf?arnumber=10098570

Reference14 articles.

1. An analytical retention model for SONOS nonvolatile memory devices in the excess electron state

2. Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories

3. Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations

4. Separation of Lateral Migration Components by Hole During the Short-Term Retention Operation in 3-D NAND Flash Memories