MLiM: High-Performance Magnetic Logic in-Memory Scheme With Unipolar Switching SOT-MRAM-Reference-Cited by-同舟云学术

MLiM: High-Performance Magnetic Logic in-Memory Scheme With Unipolar Switching SOT-MRAM

Published:2023-06 Issue:6 Volume:70 Page:2412-2424
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Wu Bi¹^ORCID,Zhu Haonan¹^ORCID,Chen Ke¹^ORCID,Yan Chenggang¹^ORCID,Liu Weiqiang¹^ORCID

Affiliation:

1. College of Electronics and Information Engineering/ College of Integrated Circuits, and the Key Laboratory of Aerospace Integrated Circuits and Microsystem, Ministry of Industry and Information Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture

Link

http://xplorestaging.ieee.org/ielx7/8919/10137339/10070096.pdf?arnumber=10070096

Reference45 articles.

1. Accelerating Low Bit-Width Deep Convolution Neural Network in MRAM

2. Energy-delay performance of giant spin Hall effect switching for dense magnetic memory

3. Computing-in-Memory Using Ferroelectrics: From Single-to Multi-Input Logic

4. High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits

5. An MRAM-Based Deep In-Memory Architecture for Deep Neural Networks

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4. Exploiting Single Ferroelectric FET for Efficient Implementation of Majority Gate Function for Approximate Computing;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

5. In-Memory Wallace Tree Multipliers Based on Majority Gates Within Voltage-Gated SOT-MRAM Crossbar Arrays;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-03