Computing-in-Memory Using Ferroelectrics: From Single-to Multi-Input Logic-Reference-Cited by-同舟云学术

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Computing-in-Memory Using Ferroelectrics: From Single-to Multi-Input Logic

Published:2021 Issue: Volume: Page:1-1
ISSN:2168-2356
Container-title:IEEE Design & Test
language:
Short-container-title:IEEE Des. Test

Author:

Huang Qingrong,Reis Dayane,Li Chao,Gao Di,Niemier Michael,Hu Xiaobo Sharon,Imani Mohsen,Yin Xunzhao,Zhuo Cheng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx7/6221038/6461917/09367251.pdf?arnumber=9367251

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of switching uniformity in TiO2-based resistive random access memory with graphene oxide embedded film;Materials Science in Semiconductor Processing;2024-11

2. Single-Ferroelectric FET based Associative Memory for Data-Intensive Pattern Matching;2024 25th International Symposium on Quality Electronic Design (ISQED);2024-04-03

3. Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars;Advanced Intelligent Systems;2023-12-27

4. FeFET-Based In-Memory Hyperdimensional Encoding Design;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-11

5. MLiM: High-Performance Magnetic Logic in-Memory Scheme With Unipolar Switching SOT-MRAM;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-06

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