Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs-Reference-Cited by-同舟云学术

Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs

Published:2019 Issue: Volume:7 Page:869-877
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Kim Sanghyeon^ORCID,Song Jin Dong,Alam M. A.^ORCID,Kim Hyung-Jun,Kim Seong Kwang,Shin Sanghoon,Han Jae-Hoon,Geum Dae-Myeong,Shim Jae-Phil,Lee Subin,Kim Hansung^ORCID,Ju Gunwu

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

KIST, South Korea

Ministry of Trade, Industry and Energy

KAIST

BK 21+

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8656606/08676035.pdf?arnumber=8676035

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