An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR-Reference-Cited by-同舟云学术

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An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

Published:2007-12 Issue:12 Volume:55 Page:2660-2669
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Jardel Olivier,De Groote Fabien,Reveyrand Tibault,Jacquet Jean-Claude,Charbonniaud Christophe,Teyssier Jean-Pierre,Floriot Didier,Quere Raymond

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/4387657/04381296.pdf?arnumber=4381296

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