A 24.25-28 GHz Wideband Power Amplifier in 150-nm GaN-on-SiC pHEMT Technology-Reference-Cited by-同舟云学术

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A 24.25-28 GHz Wideband Power Amplifier in 150-nm GaN-on-SiC pHEMT Technology

Published:2022-11-27 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Zhang Hai¹,Xu Jin-Xu¹,Li Hui-Yang¹,Yin Zhang Xiu¹

Affiliation:

1. South China University of Technology,School of Electronic and Information Engineering,Guangzhou,China,510640

Funder

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10106786/10106791/10106830.pdf?arnumber=10106830

Reference10 articles.

1. 10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology

2. A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network

3. A Ka-Band 40 W Output Power and 30 % PAE GaN MMIC Power Amplifier for Satellite Communication

4. A 24.5-27 GHz GaN Power Amplifier MMIC with 4 W Maximum Saturation Output Power

5. 12W, 30% PAE, 40 GHz power amplifier MMIC using a commercially available GaN/Si process

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