10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology-Reference-Cited by-同舟云学术

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10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology

Published:2019-10 Issue: Volume: Page:
ISSN:
Container-title:2019 49th European Microwave Conference (EuMC)
language:
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Author:

Potier C.,Jacquet J-C,Lacam C.,Michel N.,Dua C.,Oualli M.,Delage S.L.,Piotrowicz S.,Chang C.,Patard O.,Trinh-Xuan L.,Gruenenpuett J.,Gamarra P.,Altuntas P.,Chartier E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8894014/8910673/08910887.pdf?arnumber=8910887

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. C/Ka Concurrent Dual-Band GaN MMIC Based on Shorted Quarter-Wavelength Line Topology;IEEE Journal of Microwaves;2024-07

2. An E band MMIC power amplifier design using 100 nm T‐Gate GaN HEMT on SiC;International Journal of Circuit Theory and Applications;2024-01-23

3. Design of Ka-Band Power Amplifier and Low-Noise Amplifier for 5G Communication Systems;Signals and Communication Technology;2024

4. A Three-Stage Wideband GaN PA for 5G mm-Wave Applications;IEEE Transactions on Circuits and Systems II: Express Briefs;2022-12

5. A Ka-band High-OP_1dB Power Amplifier in 0.15-μm GaN Process for 5G Base Station and Satellite Communications Applications;2022 Asia-Pacific Microwave Conference (APMC);2022-11-29

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