A Ka-band High-OP1dB Power Amplifier in 0.15-μm GaN Process for 5G Base Station and Satellite Communications Applications
Author:
Affiliation:
1. Graduate Institute of Communication Engineering, National Taiwan University,Taipei,Taiwan,R. O.C.,10617
2. Ultraband Technologies Inc,Taipei,Taiwan,R.O.C.,11158
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9999720/9999721/09999881.pdf?arnumber=9999881
Reference10 articles.
1. 27–31 GHz 5W GaN Power Amplifier;TGA2594 datasheet,2021
2. RF power amplifiers for wireless communications
3. Harmonic Suppression of a Three-Stage 25–31-GHz GaN MMIC Power Amplifier Using Elliptic Low-Pass Filtering Matching Network
4. Design, Analysis and Evaluation of a Broadband High-Power Amplifier for Ka-Band Frequencies
5. Millimeter-Wave GaN Power Amplifier MMICs for 5G Application
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ka-Band GaN Power Amplifier with Integrated DC Supply Switch and RF Switch;2024 25th International Microwave and Radar Conference (MIKON);2024-07-01
2. Design of the 4,4-4,9 GHz Broadband Power Amplifier for 5G Base Station Equipment;2024 Conference of Young Researchers in Electrical and Electronic Engineering (ElCon);2024-01-29
3. Nonlinear characterization of a GaN power amplifier under antenna impedance mismatch in a mm-wave T/R chip context;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
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