Millimeter-Wave GaN Power Amplifier MMICs for 5G Application
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8682239/8702066/08702133.pdf?arnumber=8702133
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
2. A Balanced Stacked GaN MMIC Power Amplifier for 26-GHz 5G applications;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
3. Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V;IEEE Electron Device Letters;2023-04
4. A Ka-band High-OP1dB Power Amplifier in 0.15-μm GaN Process for 5G Base Station and Satellite Communications Applications;2022 Asia-Pacific Microwave Conference (APMC);2022-11-29
5. A 26 GHz Power Amplifier with 26.4 dB Power Gain and 22.1 dBm Output Power in 65 nm CMOS;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28
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