A Ka-Band 40 W Output Power and 30 % PAE GaN MMIC Power Amplifier for Satellite Communication
Author:
Affiliation:
1. Mitsubishi Electric Corporation,Information Technology R&D Center,Kamakura,Japan,247-8501
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9783221/9783226/09783994.pdf?arnumber=9783994
Reference9 articles.
1. A 5 W AlGaN/GaN power amplifier MMIC for 25–27 GHz downlink applications
2. Ka-band GaN power amplifier MMIC chipset for satellite and 5G cellular communications
3. A CW 20W Ka-band GaN high power MMIC amplifier with a gate pitch designed by using one-finger large signal models
4. High efficiency Ka-band Gallium Nitride power amplifier MMICs
5. High power and high efficiency Ka band power amplifier
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect;Electronics;2024-07-03
2. A Ka-band 15 W Output Power and >30% PAE GaN MMIC Power Amplifier with Low IMD3 Over 600 MHz Tone Spacing for SATCOM;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. A 24.25-28 GHz Wideband Power Amplifier in 150-nm GaN-on-SiC pHEMT Technology;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
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