3 V operation L-band power double-doped heterojunction FETs-Reference-Cited by-同舟云学术

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3 V operation L-band power double-doped heterojunction FETs

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Container-title:1993 IEEE MTT-S International Microwave Symposium Digest
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Author:

Iwata N.,Inosako K.,Kuzuhara M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/694/6842/00276721.pdf?arnumber=276721

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of Dual δ-Doped InGaP∕InGaAs pHEMTs with Various Doping Profiles;Journal of The Electrochemical Society;2009

2. 1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET;IEICE Transactions on Electronics;2008-07-01

3. Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1−xAs/AlGaAs pHEMT;Semiconductor Science and Technology;2006-10-18

4. A highly efficient linearized wide-band CDMA handset power amplifier based on predistortion under various bias conditions;IEEE Transactions on Microwave Theory and Techniques;2001-06

5. A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits;IEEE Transactions on Microwave Theory and Techniques;2001

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