1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
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Published:2008-07-01
Issue:7
Volume:E91-C
Page:1104-1108
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ISSN:0916-8524
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Container-title:IEICE Transactions on Electronics
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language:en
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Short-container-title:IEICE Transactions on Electronics
Author:
HARIMA F.,BITO Y.,TAKAHASHI H.,IWATA N.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials