A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits-Reference-Cited by-同舟云学术

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A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits

Published:2001 Issue:8 Volume:49 Page:1410-1418
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Yeong-Lin Lai ,Kuo-Hua Hsu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/20341/00939921.pdf?arnumber=939921

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 23–29.5 GHz three‐stage mm‐wave GaN power amplifier using arbitrary two‐port complex‐impedance matching method;International Journal of Circuit Theory and Applications;2023-07

2. Parasitic Parameters Extraction and Compensation for Broadband High-Efficiency mm-Wave GaN MMIC PA Design;2023 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO);2023-06-28

3. A complete small‐signal model of GaAs dual‐gate HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-04-07

4. A Novel GaN/SiC MMIC Gain Switch Using a Resonant Bidirectional FET Amplifier;2021 51st European Microwave Conference (EuMC);2022-04-04

5. Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f_max·V_BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates;Applied Physics Letters;2022-03-07

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