Analytic model for the post-breakdown conductance of sub-5-nm SiO/sub 2/ gate oxides
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/32196/01498995.pdf?arnumber=1498995
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis and Simulation of the Postbreakdown $I-V$ Characteristics of n-MOS Transistors in the Linear Response Regime;IEEE Electron Device Letters;2013-06
2. Circuit Design-Oriented Stochastic Piecewise Modeling of the Postbreakdown Gate Current in MOSFETs: Application to Ring Oscillators;IEEE Transactions on Device and Materials Reliability;2012-03
3. Equivalent Circuit Model for the Gate Leakage Current in Broken Down $\hbox{HfO}_{2}/\hbox{TaN/TiN}$ Gate Stacks;IEEE Electron Device Letters;2008-12
4. Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation;Microelectronics Reliability;2008-08
5. Gate Oxide Wear-Out and Breakdown Effects on the Performance of Analog and Digital Circuits;IEEE Transactions on Electron Devices;2008-04
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