Gate Oxide Wear-Out and Breakdown Effects on the Performance of Analog and Digital Circuits-Reference-Cited by-同舟云学术

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Gate Oxide Wear-Out and Breakdown Effects on the Performance of Analog and Digital Circuits

Published:2008-04 Issue:4 Volume:55 Page:997-1004
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fernandez Raul,Martin-Martinez J.,Rodriguez R.,Nafria Montserrat,Aymerich Xavier H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4475396/04469874.pdf?arnumber=4469874

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