Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Electron transport through broken down ultra-thin SiO2 layers in MOS devices;Miranda;Mic Rel,2005
2. Transport characteristics of posthard breakdown thin silicon oxide films and consideration of physical models;Omura;J Appl Phys,2002
3. An embedded quantum wire model of dielectric breakdown;Ting;Appl Phys Lett,1999
4. Analytic modeling of leakage current through multiple breakdown paths in SiO2 films;Miranda;Proc IEEE IRPS,2001
5. Analytic model for the post-breakdown conductance of sub-5-nm SiO2 gate oxides;Miranda;IEEE Electron Dev Lett,2005
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