A 1T/1C Ferrodectric RAM Using A Double-level Metal Process For Highly Scalable Nonvolatile Memory-Reference-Cited by-同舟云学术

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A 1T/1C Ferrodectric RAM Using A Double-level Metal Process For Highly Scalable Nonvolatile Memory

Published:1997 Issue: Volume: Page:
ISSN:
Container-title:Symposium on VLSI Technology
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Author:

Dong-Jin Jung ,Nam-Soo Kang ,Sung-Yung Lee ,Bon-Jae Koo ,Jin-Woo Lee ,Joo-Han Park ,Yoon-Soo Chun ,Mi-Hyang Lee ,Byung-Gil Jeon ,Sang-In Lee ,Tae-Eam Shim ,Chang-Gyu Hwang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4913/13565/00623737.pdf?arnumber=623737

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A VISION OF FRAM AS A FUSION MEMORY;Integrated Ferroelectrics;2008-06-10

2. Effect of microgeometry on switching and transport in lead zirconate titanate capacitors: Implications for etching of nano-ferroelectrics;Journal of Applied Physics;2004-05

3. Integration technology for ferroelectric memory devices;Microelectronics Reliability;2003-03

4. High density stand alone-fram;Integrated Ferroelectrics;2001-01

5. Integration technology for ferroelectric memory;Integrated Ferroelectrics;1999-11

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